4 TB Samsung 9100 PRO M. 2 PCIe 5.0 NVMe SSD. 2 2280 Form Factor. PCIe 5.0 x4 / NVMe 2.0 Interface. Sequential Reads up to 14,800 MB/s. Sequential Writes up to 13,400 MB/s. 4GB LPDDR4x Cache Memory. Samsung V-NAND TLC Flash Technology. Built for AI and beyond. With up to twice the speed of the 990 PRO SSD¹ and up to an 8TB storage option, ² the Samsung 9100 PRO SSD supercharges AI workloads, 4K video rendering, and gaming. Interface: PCIe 5.0 x4, NVMe 2.0 Form Factor: M. Read/Write (MB/s): 14,800 / 13,400. Read/Write (IOPS, QD32): 2,200K / 2,600K. Data Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) Total Bytes Written (TBW): 2,400 Storage Capacity: 4TB NAND: Samsung V NAND TLC (V8) Controller: In-House Controller Cache Memory: 4GB LPDDR4X.